A low phase noise silicon 18-GHz push-push VCO

被引：20
作者：
Dussopt, L [1 ]
Rebeiz, GM [1 ]
机构：
[1] Univ Michigan, Radiat Lab, Ann Arbor, MI 48109 USA
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2003年 / 13卷 / 01期
关键词：
oscillator; phase noise; silicon; varactor; voltage controlled oscillator (VCO);
D O I：
10.1109/LMWC.2002.807699
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and measurement of a push-push voltage controlled oscillator (VCO) at 18.66-18.3 GHz are presented in this paper. The circuit includes two packaged silicon transistors (Siemens BFP 540F) and a microstrip resonator tuned by two GaAs varactor diodes (M/A-COM ML46580). A 360-MHz tuning range is obtained with an output power of 0-3.1 dBm. The fundamental rejection is around 17 dB for a wide range of collector bias current. The phase noise is below -103 dBc/Hz at 100-kHz offset and below -122 dBc/Hz at 1 MHz for the entire tuning bandwidth.
引用
收藏
页码：4 / 6
页数：3
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