Microstructural examination of irradiated and unirradiated V-4Cr-4Ti pressurized creep tubes

被引:4
作者
Gelles, DS [1 ]
机构
[1] Pacific NW Natl Lab, Richland, WA 99352 USA
关键词
D O I
10.1016/S0022-3115(02)01007-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Microstructures of three pressurized tubes of V-4Cr-4Ti heat 832665 following irradiation in the Advanced Test Reactor at similar to300 degreesC to similar to5 dpa are examined and compared with thermal creep tubes tested at 700 and 800 degreesC. Irradiation creep response at 300 degreesC is found to be associated with dislocation development and may be affected by precipitation. Stress appears to encourage grain boundary migration during irradiation creep. Segregation of Cr to boundaries and Si behind boundaries was found to accompany the grain boundary migration. Thermal creep is probably due to dislocation climb influenced by TiO2 precipitation. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:393 / 397
页数:5
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