Oxygen vacancies modulating the photodetector performances in ε-Ga2O3 thin films

被引:99
作者
Li, Shan [1 ]
Yue, Jianying [1 ]
Ji, Xueqiang [1 ]
Lu, Chao [1 ]
Yan, Zuyong [1 ]
Li, Peigang [1 ]
Guo, Daoyou [2 ,3 ]
Wu, Zhenping [1 ]
Tang, Weihua [1 ,4 ,5 ]
机构
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Sch Sci, Lab Informat Funct Mat & Devices, Beijing 100876, Peoples R China
[2] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Hangzhou 310018, Peoples R China
[3] Zhejiang Sci Tech Univ, Key Lab Opt Field Manipulat Zhejiang Prov, Dept Phys, Hangzhou 310018, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210046, Peoples R China
[5] Nanjing Univ Posts & Telecommun, Coll Microelect, Natl & Local Joint Engn Lab RF Integrat & Micropa, Nanjing 210046, Peoples R China
基金
中国国家自然科学基金;
关键词
SOLAR-BLIND PHOTODETECTOR; BETA-GA2O3; SAPPHIRE; GROWTH; STATES; MOCVD;
D O I
10.1039/d1tc00616a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By acting as the trapping centers during charge carrier transfer, oxygen vacancy (VO) plays a critical role in oxide photoelectric devices. Herein, a post-annealing method was introduced to perfect the photodetection performances of epsilon-Ga2O3 photodetectors (PDs) by improving the film quality and modulating the V-O defect concentration. The native oxygen-deficient epsilon-Ga2O3 epitaxial films fabricated via metal-organic chemical vapor deposition become highly dense and V-O-less after oxidation annealing, leading to an enhanced performance, while they become V-O-rich after reduction annealing to depress the PD property. Compared with the pristine PD, the crucial parameters of the devices with a lower V-O concentration have been improved by 1-6 magnitude with a high photo-to-dark current ratio of 1.06 x 10(8), a large responsivity of 1.368 A W-1, an excellent detectivity of 9.13 x 10(14) Jones, a superior linear dynamic range of 176.7 dB and an outstanding external quantum efficiency of 666.5% and a record-high rejection ratio (R-240/R-400) of 1.80 x 10(7). As the V-O defect is commonly ubiquitous in oxide materials, our investigation of regulating the V-O concentrations in epsilon-Ga2O3 and then exerting influences on the PD capabilities will provide principles for designing high-performance photoelectric devices.
引用
收藏
页码:5437 / 5444
页数:8
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