Design of Two-stage Fully-integrated CMOS Power Amplifier for K-band Applications

被引：0

作者：

Kim, Hyunjun ^{[1
]}

Bae, Jongseok ^{[1
]}

Oh, Sungjae ^{[1
]}

Lim, Wonseob ^{[1
]}

Yang, Youngoo ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Mobile Commun & Power Elect, Suwon 440746, South Korea

来源：

2017 19TH INTERNATIONAL CONFERENCE ON ADVANCED COMMUNICATIONS TECHNOLOGY (ICACT) - OPENING NEW ERA OF SMART SOCIETY | 2017年

基金：

新加坡国家研究基金会;

关键词：

Differential power amplifier; integrated circuit; CMOS power amplifier; K-band; Cross-coupled capacitor (CCC);

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a K-band power amplifier integrated circuit using Samsung 65 nm CMOS process. The power amplifier adopts two-stage configuration for high power gain. The input, output, and inter-stage transformers are integrated. By neutralizing gate-drain capacitance using cross-coupled capacitors, the power gain and stability were improved. Its chip size is 0.78 x 0.62 mm(2). The implemented two-stage power amplifier showed a power gain of 19.6 dB, a saturated output power of 13.5 dBm, and an efficiency of 7.19 % with a supply voltage of 1.1 V at the frequency band of 24 GHz.

引用

页码：493 / 496

页数：4

共 11 条

[1]

[Anonymous], P AS PAC MICR C 2010

[2]

[Anonymous], 2006, ASIA PACIFIC MICROCO, DOI DOI 10.1109/APMC.2006.4429430

[3]

[Anonymous], MICR INT CIRC C 2007

[4]

[Anonymous], MICR OPT C IMOC 2009