Nonstationary Single Event Latch-up in CMOS ICs

被引：2

作者：

Chumakov, Alexander, I ^{[1
,2
]}

Bobrovsky, Dmitry, V ^{[1
,2
]}

Pechenkin, Alexander A. ^{[1
,2
]}

Savchenkov, Dmitry, V ^{[1
,2
]}

Sorokoumov, Georgy S. ^{[1
,2
]}

机构：

[1] Specialized Elect Syst SPELS, Moscow, Russia

[2] Natl Res Nucl Univ NRNU MEPHI, Moscow, Russia

来源：

2018 18TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2018年

关键词：

single event latch-up; rail span collapse; transient effect; heavy ion;

D O I：

10.1109/RADECS45761.2018.9328678

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.

引用

页码：200 / 203

页数：4

共 9 条

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