Effect of an InP/In0.53Ga0.47As interface on spin-orbit interaction in In0.52Al0.48As/In0.53Ga0.47As heterostructures -: art. no. 045328

被引：38
作者：
Lin, YP
Koga, T
Nitta, J
机构：
[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
PHYSICAL REVIEW B | 2005年 / 71卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.71.045328
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the effect of the insertion of an InP/In0.53Ga47As Interface on the Rashba spin-orbit interaction in In0.52Al0.48As/In0.53Ga0.47As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In0.53Ga47As well, the overall values of the spin-orbit coupling constant alpha turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the k.p theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.
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页数：4
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