Photocurrent imaging of charge transport barriers in carbon nanotube devices

被引:96
作者
Balasubramanian, K
Burghard, M
Kern, K
Scolari, M
Mews, A
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Johannes Gutenberg Univ Mainz, Inst Phys Chem, D-55099 Mainz, Germany
关键词
D O I
10.1021/nl050053k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The realization of high-performance electrical devices incorporating single-wall carbon nanotubes critically depends on the minimization of charge transport barriers in the tubes and at the contacts. Herein we demonstrate photocurrent imaging as a fast and effective tool to locate such barriers within individual metallic nanotubes; contacted by metal electrodes. The locally induced photocurrents directly reflect the existence of built-in electric fields associated with the presence of depletion layers at the contacts or structural defects along the tubes.
引用
收藏
页码:507 / 510
页数:4
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