The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template

被引：11

作者：

Jiang, Changjun ^{[1
]}

Wu, Lei ^{[1
]}

Wei, WenWen ^{[1
]}

Dong, Chunhui ^{[1
]}

Yao, Jinli ^{[1
]}

机构：

[1] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2014年 / 9卷

基金：

中国国家自然科学基金;

关键词：

Nanowire; Thin film; Electrochemical deposition; Resistive random access memory; MODULATION;

D O I：

10.1186/1556-276X-9-584

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect.

引用

页数：5

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