The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template

被引：10
作者：
Jiang, Changjun [1 ]
Wu, Lei [1 ]
Wei, WenWen [1 ]
Dong, Chunhui [1 ]
Yao, Jinli [1 ]
机构：
[1] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2014年 / 9卷
基金：
中国国家自然科学基金;
关键词：
Nanowire; Thin film; Electrochemical deposition; Resistive random access memory; MODULATION;
D O I：
10.1186/1556-276X-9-584
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect.
引用
收藏
页数：5
相关论文
共 21 条
  • [1] Ballav N., 2008, ANGEW CHEM INT EDIT, V120, P1443
  • [2] Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO
    Chen, Guang
    Song, Cheng
    Chen, Chao
    Gao, Shuang
    Zeng, Fei
    Pan, Feng
    [J]. ADVANCED MATERIALS, 2012, 24 (26) : 3515 - 3520
  • [3] Chhaya UV, 2011, INDIAN J PURE AP PHY, V49, P833
  • [4] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
    Choi, BJ
    Jeong, DS
    Kim, SK
    Rohde, C
    Choi, S
    Oh, JH
    Kim, HJ
    Hwang, CS
    Szot, K
    Waser, R
    Reichenberg, B
    Tiedke, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
  • [5] Directed Self-Assembly of Epitaxial CoFe2O4-BiFeO3 Multiferroic Nanocomposites
    Comes, Ryan
    Liu, Hongxue
    Kholchov, Mikhail
    Kasica, Richard
    Lu, Jiwei
    Wolf, Stuart A.
    [J]. NANO LETTERS, 2012, 12 (05) : 2367 - 2373
  • [6] Resistive switching properties and physical mechanism of cobalt ferrite thin films
    Hu, Wei
    Zou, Lilan
    Chen, Ruqi
    Xie, Wei
    Chen, Xinman
    Qin, Ni
    Li, Shuwei
    Yang, Guowei
    Bao, Dinghua
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (14)
  • [7] Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices
    Hu, Wei
    Chen, Xinman
    Wu, Guangheng
    Lin, Yanting
    Qin, Ni
    Bao, Dinghua
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (06)
  • [8] Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances
    Hu, Wei
    Qin, Ni
    Wu, Guangheng
    Lin, Yanting
    Li, Shuwei
    Bao, Dinghua
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 134 (36) : 14658 - 14661
  • [9] Strain induced magnetic anisotropy in highly epitaxial CoFe2O4 thin films
    Huang, W.
    Zhu, J.
    Zeng, H. Z.
    Wei, X. H.
    Zhang, Y.
    Li, Y. R.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (26)
  • [10] Nonpolar resistive switching in Mn-doped BiFeO3 thin films by chemical solution deposition
    Luo, J. M.
    Lin, S. P.
    Zheng, Yue
    Wang, B.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (06)
123