Silicon nanowire arrays synthesized using the modified MACE process: Integration into chemical sensors and solar cells

被引:3
|
作者
Dusheiko, M. G. [1 ]
Koval, V. M. [1 ]
Obukhova, T. Yu [1 ]
机构
[1] Natl Tech Univ Ukraine, Igor Sikorsky Kyiv Polytech Inst, Microelect Dept, 37 Prospect Peremohy, UA-03056 Kiev, Ukraine
关键词
metal-assisted chemical etching; silicon nanowires; sensors; solar cells; HIGH-ASPECT-RATIO; SILVER; MECHANISM; CATALYST; PROGRESS;
D O I
10.15407/spqeo25.01.058
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures with a high aspect ratio could be used both in sensors and solar cells. It has been shown that application of the metal-assisted chemical etching (MACE) process enables to significantly improve the short-circuit current density in silicon solar cells (up to 29 mA/cm(2)). Also, the possibility of detection of hydrogen peroxide and glucose (via enzymatic reaction) by resistor-like sensors with nanostructured silicon as the sensitive area has been demonstrated with the sensitivity up to 2.5...2.75 mA/V.%.
引用
收藏
页码:58 / 67
页数:10
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