共 8 条
[1]
AJ MM, 1999, JPN J APPL PHYS, V38, pL811
[2]
Low threshold GaInAsP lasers with semiconductor/air distributed Bragg reflector fabricated by inductively coupled plasma etching
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
2000, 39 (6A)
:3406-3409
[5]
1.5-μm-wavelength distributed feedback lasers with deeply etched first-order vertical grating
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
2001, 40 (10B)
:L1107-L1109
[6]
High-reflectivity semiconductor/benzocyclobutene Bragg reflector mirrors for GaInAsP/InP lasers
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
2001, 40 (4A)
:2269-2277