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Electronics from solution-processed 2D semiconductors
被引:25
作者:
Gao, Xiangxiang
[1
,2
]
Bian, Gang
[1
,2
]
Zhu, Jian
[1
,2
,3
,4
]
机构:
[1] Nankai Univ, Sch Mat Sci & Engn, Tianjin 300350, Peoples R China
[2] Nankai Univ, Natl Inst Adv Mat, Tianjin 300350, Peoples R China
[3] Nankai Univ, Tianjin Key Lab Met & Mol Mat Chem, Tianjin 300350, Peoples R China
[4] Nankai Univ, Tianjin Key Lab Rare Earth Mat & Applicat, Tianjin 300350, Peoples R China
关键词:
TRANSITION-METAL DICHALCOGENIDES;
FIELD-EFFECT TRANSISTORS;
CHEMICAL-VAPOR-DEPOSITION;
THIN-FILM TRANSISTORS;
HIGH-PERFORMANCE;
SINGLE-LAYER;
WAFER-SCALE;
BLACK PHOSPHORUS;
MOS2;
NANOSHEETS;
COLLOIDAL SYNTHESIS;
D O I:
10.1039/c9tc03935j
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Two-dimensional (2D) semiconductors have aroused tremendous interest due to their potential to revolutionize the electronics industry and illustrate fundamental quantum physics related to electronics and optics. Any practical applications of 2D semiconductors rely on the production of high-quality 2D materials on a wafer scale. Solution-processed approaches for the attainment of 2D semiconductors and uniform thin films have potential to overcome the challenges of high energy cost and rigorous growth control in vapor-based synthesis approaches. In addition, they also allow low-temperature deposition, and therefore are the driving forces for the advancement of flexible electronics. In particular, the availability of high-quality solution-processed monolayer or few-layer 2D metal chalcogenides and 2D elements ushers in new developments in the field of electronics. The individual 2D semiconductors or their thin film assemblies are potential candidates for proof-of-concept or large-scale device applications. In this review, we describe the categories of 2D semiconductors, and summarize their solution-based synthesis and assembly approaches, and their device applications in field-effect transistors, photodetectors and memristors. In the end, insights and perspectives on the future development of this field are discussed.
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页码:12835 / 12861
页数:27
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