RF-MEMS filters manufactured on silicon: Key facts about Bulk-Acoustic-Wave technology

被引：8

作者：

Aigner, R ^{[1
]}

机构：

[1] Infineon Technol AG, D-81739 Munich, Germany

来源：

2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2003年

关键词：

Bulk-Acoustic-Wave (BAW) filter; RF-MEMS; Solidly-Mounted Resonator (SMR);

D O I：

10.1109/SMIC.2003.1196694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The working principle and performance of state-of-the-art Bulk-Acoustic-Wave (BAW) devices is reviewed. The importance for RF-fllters in mobile,phone applications will be discussed and the benefit of Silicon-based technologies highlighted. Challenges in manufacturing of BAWs will be briefly reviewed. The most important performance parameters such as resonator bandwidth and Q-values - and their dependency on processing and design will be described. Whether monolithic integration "System-On-Chip" together with RF-ICs or hybrid integration "System-In-Package" makes more sense will be discussed. Examples of state-of-the-art in BAW filters in production and ramp-up status will be presented.

引用

页码：157 / 161

页数：5