Melt Nonstoichiometry and Defect Structure of ZnGeP2 Crystals

被引：17

作者：

Verozubova, G. A. ^{[1
]}

Trofimov, A. Yu. ^{[1
]}

Trukhanov, E. M. ^{[2
]}

Kolesnikov, A. V. ^{[2
]}

Okunev, A. O. ^{[3
]}

Ivanov, Yu. F. ^{[4
]}

Galtier, P. R. J. ^{[5
]}

Hassani, S. A. Said ^{[5
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Inst Monitoring Climat & Ecol Syst, Tomsk 634021, Russia

[2] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Novgorod State Univ, Veliky Novgorod 173003, Russia

[4] Russian Acad Sci, Siberian Branch, Inst High Current Elect, Tomsk 634021, Russia

[5] Univ Versailles St Quentin, CNRS, UMR 8635, GEMaC, F-78035 Versailles, France

来源：

CRYSTALLOGRAPHY REPORTS | 2010年 / 55卷 / 01期

关键词：

NATIVE DEFECTS; GROWTH;

D O I：

10.1134/S1063774510010116

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The defect structure of ZnGeP2 crystals grown from a melt by the vertical Bridgman method has been investigated. A deviation of the melt composition from stoichiometric leads to the formation of striations and the inclusions of other phases which are observed as structures (chains) oriented parallel to the growth axis. According to the microanalysis data, the inclusion composition corresponds to a mixture of ZnGeP2, Zn3P2, and Ge. Nanoinclusions of germanium phosphide are detected by transmission electron microscopy. X-ray topography reveals defects of four types. The main defects in the central part of an ingot are related to the composition fluctuations, and the newly formed dislocations are basically single ones. Most dislocations are formed at the crystal periphery.

引用

页码：65 / 70

页数：6

共 13 条

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