Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+ Ion Implantation

被引：12

作者：

Kim, Bumjoon ^{[1
]}

Lee, Kwangtaek ^{[1
]}

Jang, Samseok ^{[1
]}

Jhin, Junggeun ^{[2
]}

Lee, Seungjae ^{[2
]}

Baek, Jonghyeob ^{[2
]}

Yu, Youngmoon ^{[2
]}

Lee, Jaesang ^{[3
]}

Byun, Dongjin ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[2] Korea Photon Technol Inst, LED Device Team, Kwangjoo 500779, South Korea

[3] Korea Atom Energy Res Inst, Engn Frontier Project, Taejon 305353, South Korea

来源：

CHEMICAL VAPOR DEPOSITION | 2010年 / 16卷 / 1-3期

关键词：

Epitaxial lateral overgrowth; Gallium nitride; Ion implantation; MOCVD; SELECTIVE-AREA; NITRIDE; LAYERS; FILMS;

D O I：

10.1002/cvde.200906807

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An epitaxial, laterally-overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high-dose, N+ ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal-organic (MO) CVD. The GaN layer on the N+ ion-implanted region is polycrystalline and acts as a mask for the ELOG process. This is attributed to the growth rate of the polycrystalline GaN being much slower than that of epitaxial GaN. After 120 min, complete coalescence is achieved with a flat surface. Scanning cathodoluminescence (CL) microscopy and high resolution X-ray diffraction (HRXRD) confirm the high optical and crystalline quality of the ELOG GaN layer.

引用

页码：80 / 84

页数：5

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