Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

被引：3

作者：

Dietrich, Christof P. ^{[1
]}

Lange, Martin ^{[1
]}

Benndorf, Gabriele ^{[1
]}

von Wenckstern, Holger ^{[1
]}

Grundmann, Marius ^{[1
]}

机构：

[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 7-8期

关键词：

Thin films; Semiconductors; Optical properties; Luminescence;

D O I：

10.1016/j.ssc.2009.11.035

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor-acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of E-D = 40 meV and E-A = 320 meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：379 / 382

页数：4

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