Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

被引：3
|
作者：
Dietrich, Christof P. [1 ]
Lange, Martin [1 ]
Benndorf, Gabriele [1 ]
von Wenckstern, Holger [1 ]
Grundmann, Marius [1 ]
机构：
[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany
来源：
SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 7-8期
关键词：
Thin films; Semiconductors; Optical properties; Luminescence;
D O I：
10.1016/j.ssc.2009.11.035
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor-acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of E-D = 40 meV and E-A = 320 meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：379 / 382
页数：4
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