InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors

被引：27

作者：

Ariyawansa, Gamini ^{[1
]}

Reyner, Charles J. ^{[1
]}

Steenbergen, Elizabeth H. ^{[1
]}

Duran, Joshua M. ^{[1
]}

Reding, Joshua D. ^{[1
]}

Scheihing, John E. ^{[1
]}

Bourassa, Henry R. ^{[2
]}

Liang, Baolai L. ^{[3
]}

Huffaker, Diana L. ^{[3
]}

机构：

[1] US Air Force, Res Lab, Wright Patterson AFB, OH 45433 USA

[2] Univ Dayton, Dept Phys, Dayton, OH 45469 USA

[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 02期

关键词：

D O I：

10.1063/1.4939904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Investigation of growth and properties of InGaAs/InAsSb strained layer superlattices, identified as ternary strained layer superlattices (ternary SLSs), is reported. The material space for the antimony-based SLS detector development is expanded beyond InAs/InAsSb and InAs/(In) GaSb by incorporating Ga into InAs. It was found that this not only provides support for strain compensation but also enhances the infrared (IR) absorption properties. A unique InGaAs/InAsSb SLS exists when the conduction band of InGaAs aligns with that of InAsSb. The bandgap of this specific InGaAs/InAsSb SLS can then be tuned by adjusting the thickness of both constituents. Due to the enhanced electron-hole wavefunction overlap, a significant increase in the absorption coefficient was theoretically predicted for ternary SLS as compared to current state-of-the-art InAs/InAsSb SLS structures, and an approximately 30%-35% increase in the absorption coefficient was experimentally observed. All the samples examined in this work were designed to have the same bandgap of approximately 0.240 eV (5.6 mu m) at 150 K. (C) 2016 AIP Publishing LLC.

引用

页数：5