Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

被引：0

作者：

Denisov, S. A. ^{[1
]}

Chalkov, V. Yu. ^{[1
]}

Shengurov, V. G. ^{[1
]}

Svetlov, S. P. ^{[1
]}

Pavlov, D. A. ^{[1
]}

Pitirimova, E. A. ^{[1
]}

机构：

[1] NI Lobachevskii State Univ, Res Physicotech Inst, Nizhnii Novgorod 603950, Russia

来源：

INORGANIC MATERIALS | 2010年 / 46卷 / 07期

关键词：

ON-SAPPHIRE; FILMS;

D O I：

10.1134/S0020168510070010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural perfection and surface morphology of sapphire substrates vacuum-annealed at atomic Si flux densities from 5 x 10(15) to 1 x 10(16) at/(cm(2) s) have been studied by electron diffraction, X-ray diffraction, and atomic force microscopy. The results demonstrate that, after annealing in the range 1160-1330A degrees C, the sapphire has a smooth, single-crystal surface, which enables the growth of twin-free silicon epilayers at 600-700A degrees C.

引用

页码：693 / 702

页数：10

共 13 条

[1] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 741 - 743
[2] SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS
CHANG, CC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03): : 500 - &
[3] DENISOV SA, 2007, IAN SSSR NEORG MATER, V43, P391
[4] GOLECKI I, 1984, COMP THIN FILM TRANS, P3
[5] Ignatkov V. D., 1971, Ukrayins'kyi Fizychnyi Zhurnal, V16, P927
[6] KLOCHKOV VP, 1968, UKR FIZ ZH, V13, P664
[7] PAPKOV VS, 1979, EPITAKSIALNYE KREMNI
[8] MOLECULAR-BEAM EPITAXY VERSUS CHEMICAL VAPOR-DEPOSITION OF SILICON ON SAPPHIRE
RICHMOND, ED
TWIGG, ME
QADRI, S
PELLEGRINO, JG
DUFFEY, MT
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2551 - 2553
[9] UNIQUE PROPERTIES OF MOLECULAR-BEAM EPITAXY SILICON ON SAPPHIRE USING INSITU HIGH-TEMPERATURE SUBSTRATE ANNEALING COMPARED WITH CHEMICALLY VAPOR-DEPOSITED SILICON ON SAPPHIRE
RICHMOND, ED
PELLEGRINO, JG
TWIGG, ME
QADRI, S
DUFFY, MT
[J]. THIN SOLID FILMS, 1990, 192 (02) : 287 - 294
[10] SHENGUROV VG, 2004, PRIB TEKH EKSP, P158

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