Nernst Limit in Dual-Gated Si-Nanowire FET Sensors

被引：312
作者：
Knopfmacher, O. [1 ]
Tarasov, A. [1 ]
Fu, Wangyang [1 ]
Wipf, M. [1 ]
Niesen, B. [1 ]
Calame, M. [1 ]
Schoenenberger, C. [1 ]
机构：
[1] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland
来源：
NANO LETTERS | 2010年 / 10卷 / 06期
关键词：
Nanowire; nanowire sensor; field-effect transistor; ion-sensitive field effect; pH-sensing; electric conductance; CMOS MICROELECTRODE ARRAY; ELECTRONIC-PROPERTIES; SILICON NANOWIRES; SENSITIVITY;
D O I：
10.1021/nl100892y
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Field effect transistors (FETs) are widely used for the label-free detection of analytes in chemical and biological experiments. Here we demonstrate that the apparent sensitivity of a dual-gated silicon nanowire FET to pH can go beyond the Nernst limit of 60 mV/pH at room temperature. This result can be explained by a simple capacitance model including all gates. The consistent and reproducible results build to a great extent on the hysteresis- and leakage-free operation. The dual-gate approach can be used to enhance small signals that are typical for bio- and chemical sensing at the nanoscale.
引用
收藏
页码：2268 / 2274
页数：7
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