Nernst Limit in Dual-Gated Si-Nanowire FET Sensors

被引：310

作者：

Knopfmacher, O. ^{[1
]}

Tarasov, A. ^{[1
]}

Fu, Wangyang ^{[1
]}

Wipf, M. ^{[1
]}

Niesen, B. ^{[1
]}

Calame, M. ^{[1
]}

Schoenenberger, C. ^{[1
]}

机构：

[1] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland

来源：

NANO LETTERS | 2010年 / 10卷 / 06期

关键词：

Nanowire; nanowire sensor; field-effect transistor; ion-sensitive field effect; pH-sensing; electric conductance; CMOS MICROELECTRODE ARRAY; ELECTRONIC-PROPERTIES; SILICON NANOWIRES; SENSITIVITY;

D O I：

10.1021/nl100892y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Field effect transistors (FETs) are widely used for the label-free detection of analytes in chemical and biological experiments. Here we demonstrate that the apparent sensitivity of a dual-gated silicon nanowire FET to pH can go beyond the Nernst limit of 60 mV/pH at room temperature. This result can be explained by a simple capacitance model including all gates. The consistent and reproducible results build to a great extent on the hysteresis- and leakage-free operation. The dual-gate approach can be used to enhance small signals that are typical for bio- and chemical sensing at the nanoscale.

引用

页码：2268 / 2274

页数：7

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