Spectroscopic ellipsometry and X-ray diffraction studies on Si1-xGex/Si epifilms and superlattices

被引：1

作者：

Xie, Deng ^{[1
,2
,3
]}

Qiu, Zhi Ren ^{[2
,3
]}

Wan, Lingyu ^{[4
]}

Talwar, Devki N. ^{[5
]}

Cheng, Hung-Hsiang ^{[6
,7
]}

Liu, Shiyuan ^{[8
]}

Mei, Ting ^{[9
,10
]}

Feng, Zhe Chuan ^{[4
]}

机构：

[1] South China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

[3] Sun Yat Sen Univ, Sch Phys, Guangzhou 510275, Peoples R China

[4] Guangxi Univ, Coll Phys Sci & Technol, Guangxi Key Lab Relativist Astrophys, Lab Optoelect Mat & Detect Technol, Nanning 530004, Peoples R China

[5] Indiana Univ Penn, Dept Phys, 975 Oakland Ave,56 Weyandt Hall, Indiana, PA 15705 USA

[6] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[7] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[8] Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China

[9] Northwestern Polytech Univ, Key Lab Space Appl Phys & Chem, Minist Educ, Xian 710072, Shaanxi, Peoples R China

[10] Northwestern Polytech Univ, Shaanxi Key Lab Opt Informat Technol, Sch Sci, Xian 710072, Shaanxi, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2017年 / 421卷

基金：

中国国家自然科学基金;

关键词：

Spectroscopic ellipsometry; X-ray diffraction; Silicon germanium; CHEMICAL-VAPOR-DEPOSITION; TEMPERATURE; TETRASILANE; SILICON; EPITAXY; ALLOYS; SIGE;

D O I：

10.1016/j.apsusc.2017.03.066

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Comprehensive optical and structural properties are reported on several MBE grown thin Si1-xGex epifilms and Si1-xGex/Si superlattices with low Ge contents by using spectroscopic ellipsometry (SE), high resolution x-ray diffraction (HR-XRD) and Raman scattering (RS). For thin Si1-xGex films, our appraised results of the optical dielectric functions from SE spectra fitted to the parameterized models have revealed discrepancies with the existing data. While E-1 and E-1 + Delta(1) critical point energies have shown similarities, their amplitudes uncovered similar to 25% larger value for the E-1 band-edge, and similar to 10% larger value for the E-1 + Delta(1) band-edge. In our samples, the observed vibrational peaks in the RS are classified as unstrained Si-Si, Ge-Ge and Ge-Si modes. These mode assignments in Si1-xGex alloys are evaluated compared and discussed with the available RS data. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：748 / 754

页数：7

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