Enhanced photocurrent in thin-film GaAs solar cells with embedded Al nanoparticles

被引：19

作者：

Singh, Gurjit ^{[1
,2
]}

Sekhon, Jagmeet Singh ^{[2
]}

Verma, S. S. ^{[1
]}

机构：

[1] St Longowal Inst Engn & Technol, Dept Phys, Longowal 148106, India

[2] Govind Natl Coll Narangwal, Dept Phys, Ludhiana, Punjab, India

来源：

ENERGY SOURCES PART A-RECOVERY UTILIZATION AND ENVIRONMENTAL EFFECTS | 2020年 / 42卷 / 07期

关键词：

Antireflection layer; FDTD; photocurrent; plasmonics; spectral absorption rate; thin-film solar cells; AG NANOPARTICLES; EFFICIENCY; PLASMONICS; METAL;

D O I：

10.1080/15567036.2019.1587082

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

It is believed that the effectual scattering by earth-abundant Al nanoparticles in combination with photoelectric conversion-efficient GaAs material may help for cost-effective solar cells. Al nanoparticles of various radii embedded at different depths in a Ta2O5-coated GaAs semiconductor have been studied by finite-difference time-domain method for their influence towards spectral absorption rate and photocurrent in GaAs solar cells. The calculated spectral absorption rate and photocurrent show a significant enhancement at the optimal depth for a particular radius of Al nanoparticles, which is explained on the basis of surface plasmon resonance. Al nanoparticles of radius 80 nm embedded just below the antireflection layer of Ta2O5 result a maximum spectral absorption rate of 0.95 that leads to a photocurrent of 30.43 mA/cm(2).

引用

页码：815 / 823

页数：9

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