Interaction between ethanol cluster ion beam and silicon surface

被引：15
作者：
Ryuto, Hiromichi [1 ]
Ozaki, Ryosuke [1 ]
Mukai, Hiroshi [1 ]
Takaoka, Gikan H. [1 ]
机构：
[1] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Nishikyo Ku, Kyoto 6158510, Japan
来源：
VACUUM | 2010年 / 84卷 / 12期
关键词：
Cluster ion beam; Sputtering; Ethanol; Radiation damage;
D O I：
10.1016/j.vacuum.2009.12.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The interaction between an ethanol cluster ion beam and a silicon surface was investigated. The sputtering depth of a silicon surface irradiated with an ethanol cluster ion beam increased with acceleration voltage. The number of disordered atoms on the silicon surface irradiated with an ethanol cluster ion beam initially showed a small dependence on retarding voltage and then a steep decrease with a further increase in retarding voltage. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1419 / 1422
页数：4
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