We simplify the empirical model of O'Leary and Malik [J. Appl. Phys. 92, 4276 (2002)] for the density of state functions associated with hydrogenated amorphous silicon, reducing the number of independent modeling parameters from six to five as a result. As a consequence of this simplification, we find that we are able to cast our joint density of states (JDOS) evaluations into a dimensionless formalism, this formalism providing an elementary and effective platform for the determination of the underlying modeling parameters from experiment. We then justify our simplification by showing, for reasonable hydrogenated amorphous silicon modeling parameter selections, that our JDOS results are very similar to those determined using the more general approach of O'Leary and Malik. We also show that this simplified model is as effective as its predecessor in capturing the results of experiment. Finally, we demonstrate the utility of our dimensionless JDOS formalism, using it for the purposes of performing a critical comparative analysis of three different hydrogenated amorphous silicon optical absorption data sets. (C) 2010 American Institute of Physics. [doi:10.1063/1.3385434]
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China
Liu, Wenzhu
Zhang, Liping
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China
Zhang, Liping
Meng, Fanying
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China
Meng, Fanying
Guo, Wanwu
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Trinasolar, State Key Lab PV Sci & Technol SKL PVST, Changzhou 213031, Jiangsu, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China
Guo, Wanwu
Bao, Jian
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Trinasolar, State Key Lab PV Sci & Technol SKL PVST, Changzhou 213031, Jiangsu, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China
Bao, Jian
Liu, Jinning
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China
Liu, Jinning
Wang, Dongliang
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Trinasolar, State Key Lab PV Sci & Technol SKL PVST, Changzhou 213031, Jiangsu, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China
Wang, Dongliang
Liu, Zhengxin
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China