Thermal conductivity of SiC after heavy ions irradiation

被引：30

作者：

Cabrero, J. ^{[1
,2
]}

Audubert, F. ^{[2
]}

Pailler, R. ^{[1
]}

Kusiak, A. ^{[3
]}

Battaglia, J. L. ^{[3
]}

Weisbecker, P. ^{[1
]}

机构：

[1] Univ Bordeaux, LCTS, F-33600 Pessac, France

[2] CEA, DEN, DEC, SPUA, F-13108 St Paul Les Durance, France

[3] Univ Bordeaux, Lab Transferts Ecoulements Fluides Energet, F-33405 Talence, France

来源：

JOURNAL OF NUCLEAR MATERIALS | 2010年 / 396卷 / 2-3期

关键词：

SILICON-CARBIDE; THIN DEPOSIT; DISPLACEMENT; IMPLANTATION; AMORPHIZATION; TEMPERATURE; RADIATION; CERAMICS; BEHAVIOR; DAMAGE;

D O I：

10.1016/j.jnucmat.2009.11.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we performed irradiation experiments on alpha-SiC samples, with heavy ions at room temperature (74 MeV Kr, fluence of 5 x 10(14) ions cm(-2)). This energy results in an irradiated layer of about 9.6 mu m for SiC. TEM and Raman analyses reveal a graded damaged material. In the electronic interactions domain SiC is weakly damaged whereas it becomes fully amorphous in the nuclear interactions domain. According to the structural examinations, the irradiated SiC is considered as a multilayered material. Thermal conductivity in both electronic and nuclear interactions domains is measured as a function of temperature and annealing temperature. It appears that such an approach is reliable to estimate thermal conductivity of ceramics under neutron irradiation. (C) 2009 Published by Elsevier B.V.

引用

页码：202 / 207

页数：6

共 24 条

[1] Ion implantation of iodine into silicon carbide: Influence of temperature on the produced damage and on the diffusion behaviour [J].

Audren, A. ;

Benyagoub, A. ;

Thome, L. ;

Garrido, F. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (12-13) :2810-2813

[2] Structural evolution of SiC nanostructured and conventional ceramics under irradiation [J].

Audren, A. ;

Monnet, I. ;

Leconte, Y. ;

Portier, X. ;

Thome, L. ;

Levalois, M. ;

Herlin-Boime, N. ;

Reynaud, C. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (12-13) :2806-2809

[3] Thermophysical characterization of a CuO thin deposit [J].

Battaglia, Jean-Luc ;

Kusiak, Andrzej .

INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2007, 28 (05) :1563-1577

[4] Photothermal radiometric characterization of a thin deposit using a linear swept-frequency heat flux waveform [J].

Battaglia, Jean-Luc ;

Kusiak, Andrzej ;

Bamford, Matthieu ;

Batsale, Jean-Christophe .

INTERNATIONAL JOURNAL OF THERMAL SCIENCES, 2006, 45 (11) :1035-1044

[5] Irradiation effects induced in silicon carbide by low and high energy ions [J].

Benyagoub, A. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (12-13) :2766-2771

[6] Molecular dynamics modeling of the thermal conductivity of irradiated SiC as a function of cascade overlap [J].

Crocombette, Jean-Paul ;

Dumazer, Guillaume ;

Hoang, Nguyen Quoc ;

Gao, Fei ;

Weber, William J. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)

[7] Characterization of thermal conductivity degradation induced by heavy ion irradiation in ceramic materials [J].

David, L. ;

Gomes, S. ;

Carlot, G. ;

Roger, J-P ;

Fournier, D. ;

Valot, C. ;

Raynaud, M. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (03)

[8] Displacement energy surface in 3C and 6H SiC [J].

Devanathan, R ;

Weber, WJ .

JOURNAL OF NUCLEAR MATERIALS, 2000, 278 (2-3) :258-265

[9]

EDMOND JA, 1986, MATER RES SOC S P, V51, P395

[10] Thermal conductivity degradation induced by heavy ion irradiation at room temperature in ceramic materials [J].

Gomes, S. ;

David, L. ;

Roger, J. -P. ;

Carlot, G. ;

Fournier, D. ;

Valot, C. ;

Raynaud, M. .

EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS, 2008, 153 (1) :87-90

← 1 2 3 →