High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS

被引：9

作者：

Kimura, K ^{[1
]}

Oota, Y

Nakajima, K

Büyüklimanli, TH

机构：

[1] Kyoto Univ, Dept Engn Phys & Mech, Kyoto 6068501, Japan

[2] Evans E, E Windsor, NJ 08520 USA

来源：

CURRENT APPLIED PHYSICS | 2003年 / 3卷 / 01期

基金：

日本学术振兴会;

关键词：

RBS; high-resolution; ultrashallow implantation; boron profiling;

D O I：

10.1016/S1567-1739(02)00227-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Depth profiles of ultralow energy (0.2-0.5 keV) B ion implants in Si(0 0 1) samples are measured by high-resolution Rutherford backscattering spectroscopy. The boron profile does not show a narrow surface concentration peak which is usually observed in the measurement of secondary ion mass spectroscopy. The obtained boron profiles roughly agree with TRIM simulation even at 0.2-keV B ion implantation. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：9 / 11

页数：3

共 5 条

[1] MONOLAYER ANALYSIS IN RUTHERFORD BACKSCATTERING SPECTROSCOPY [J].

KIMURA, K ;

OHSHIMA, K ;

MANNAMI, M .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2232-2234

[2]

Lindhard J., 1965, KONGEL DAN VIDENSK S, V34

[3] Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis [J].

Magee, CW ;

Jacobson, D ;

Gossmann, HJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :489-492

[4] Elemental B distributions and clustering in low-energy B+ ion-implanted Si [J].

Wang, TS ;

Cullis, AG ;

Collart, EJH ;

Murrell, AJ ;

Foad, MA .

APPLIED PHYSICS LETTERS, 2000, 77 (22) :3586-3588

[5]

Ziegler J. F., 1985, The Stopping of Ions in Matter, P93, DOI DOI 10.1007/978

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