New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

被引：352
作者：
Cao, Y [1 ]
Sato, T [1 ]
Orshansky, M [1 ]
Sylvester, D [1 ]
Hu, CM [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
PROCEEDINGS OF THE IEEE 2000 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2000年
关键词：
D O I：
10.1109/CICC.2000.852648
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L-eff, T-ox, V-t, R-dsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18 mu m and 0.13 mu m technology nodes with L-eff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.
引用
收藏
页码：201 / 204
页数：4
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