Characterization of high-Tc ramp-type Josephson junctions constructed with a Nd2CuO4 barrier

被引：3

作者：

Gao, J ^{[1
]}

So, SM ^{[1
]}

Wang, ZH ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2002年 / 15卷 / 12期

关键词：

D O I：

10.1088/0953-2048/15/12/310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-T-c ramp-type Josephson junctions were fabricated using a Nd2CuO4 barrier. Such a Nd2CuO4 material has excellent structural, thermal and chemical compatibility with YBa2Cu3O7-delta. Its very stable 214-T' structure, superior electric properties and closed lattice matching make it desirable to construct multilayer junctions. The growth and nature of the heteroepitaxial Nd2CuO4/YBa2Cu3O7-delta structures were investigated by using x-ray diffraction, small angle x-ray reflection, rocking curve, electron microscopy and surface scan measurements. Junctions with a Nd2CuO4 barrier display typical resistively shunted junction-like I-V characteristics with reasonable IcRn products. The large normal resistance, absence of the potential barrier at the SN boundary and a high transparency for the quasi-particles show the advantages of the Nd2CuO4 barrier. The temperature dependence of Josephson parameters and the transport process were studied and discussed.

引用

页码：1685 / 1688

页数：4

共 16 条

[1]

ANTOGNAZZA L, 1997, APPL PHYS LETT, V70, P3153

[2] NOVEL ALL-HIGH TC EPITAXIAL JOSEPHSON JUNCTION [J].

CHIN, DK ;

VANDUZER, T .

APPLIED PHYSICS LETTERS, 1991, 58 (07) :753-755

[3] SUPERCURRENTS IN LEAD-COPPER-LEAD SANDWICHES [J].

CLARKE, J .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 308 (1495) :447-&

[4] ON THE PROXIMITY EFFECT BETWEEN NORMAL METALS AND CUPRATE SUPERCONDUCTORS [J].

DEUTSCHER, G ;

SIMON, RW .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) :4137-4139

[5] CHARACTERISTICS OF ADVANCED YBA2CU3OX PRBA2CU3OX YBA2CU3OX EDGE TYPE JUNCTIONS [J].

GAO, J ;

BOGUSLAVSKIJ, Y ;

KLOPMAN, BBG ;

TERPSTRA, D ;

GERRITSMA, GJ ;

ROGALLA, H .

APPLIED PHYSICS LETTERS, 1991, 59 (21) :2754-2756

[6] Enhanced initial epitaxy of YBa2Cu3Oy ultrathin films grown on YSZ substrates by using a new buffer layer of Nd2CuO4 [J].

Gao, J ;

Tang, WH ;

Chui, TC .

PHYSICA C, 2000, 330 (1-2) :33-38

[7] CONTROLLED PREPARATION OF ALL HIGH-TC SNS-TYPE EDGE JUNCTIONS AND DC SQUIDS [J].

GAO, J ;

AARNINK, WAM ;

GERRITSMA, GJ ;

ROGALLA, H .

PHYSICA C, 1990, 171 (1-2) :126-130

[8] High-Tc ramp-type Josephson junctions with a continually graded Y1-xPrxBa2Cu3Oy barrier [J].

Gao, J ;

Sun, JL ;

So, SM ;

Tang, WH ;

Li, TK .

APPLIED PHYSICS LETTERS, 2001, 79 (19) :3101-3103

[9] THERMALLY ACTIVATED PHASE SLIPPAGE IN HIGH-TC GRAIN-BOUNDARY JOSEPHSON-JUNCTIONS [J].

GROSS, R ;

CHAUDHARI, P ;

DIMOS, D ;

GUPTA, A ;

KOREN, G .

PHYSICAL REVIEW LETTERS, 1990, 64 (02) :228-231

[10] ALL HIGH-TC EDGE-GEOMETRY WEAK LINKS UTILIZING Y-BA-CU-O BARRIER LAYERS [J].

HUNT, BD ;

FOOTE, MC ;

BAJUK, LJ .

APPLIED PHYSICS LETTERS, 1991, 59 (08) :982-984

← 1 2 →