Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part I: Drain Current and Transconductances

被引：7

作者：

Makris, Nikolaos ^{[1
]}

Jazaeri, Farzan ^{[2
]}

Sallese, Jean-Michel ^{[2
]}

Sharma, Rupendra Kumar ^{[3
]}

Bucher, Matthias ^{[1
]}

机构：

[1] Tech Univ Crete, Sch Elect & Comp Engn, Khania 73100, Greece

[2] Ecole Polytech Fed Lausanne, Sch Engn, CH-1015 Lausanne, Switzerland

[3] Czech Tech Univ, Dept Microelect, Prague 16627, Czech Republic

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 07期

基金：

瑞士国家科学基金会;

关键词：

Analytical model; circuit simulation; compact model; junction field-effect transistor (JFET); temperature effect; FIELD-EFFECT TRANSISTORS; CIRCUIT SIMULATION; JFET; MOSFETS; VOLTAGE;

D O I：

10.1109/TED.2018.2838101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of not only device fabrication but also its operation. The device has been largely used in low-noise applications, but also more recently, in power electronics. Physics-based compact models for JFETs, contrary to MOSFETs, are, however, scarce. In this paper, an analytical, charge-based model is established for the mobile charges, drain current, and transconductances of symmetric DG JFETs, covering all regions of device operation. The model is unified and continuous from subthreshold to linear and saturation operation and is valid over a large temperature range. This charge-based model constitutes the basis of a full compact model of the DG JFET.

引用

页码：2744 / 2750

页数：7