Real-time soft-error rate measurements: A review

被引：30

作者：

Autran, J. L. ^{[1
,3
,4
]}

Munteanu, D. ^{[1
,3
,4
]}

Roche, P. ^{[2
,3
,4
]}

Gasiot, G. ^{[2
,3
,4
]}

机构：

[1] Aix Marseille Univ, UMR CNRS IM2NP 7334, Fac Sci, F-13397 Marseille 20, France

[2] STMicroelectronics, F-38926 Crolles, France

[3] Aix Marseille Univ, Radiat Effects & Elect Reliabil REER Joint Lab, CNRS, Marseille, France

[4] STMicroelectronics, Geneva, Switzerland

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 08期

关键词：

Soft error; Single event effects (SEEs); Real-time testing; Terrestrial cosmic rays; Altitude experiments; Underground experiments; SINGLE-EVENT-UPSET; PARTICLE EMISSION RATE; NEUTRONS; ALTITUDE; DEVICES; SEMM-2; FLUX;

D O I：

10.1016/j.microrel.2014.02.031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The real-time (or life testing) soft-error rate (SER) measurement is an experimental reliability technique to determine the soft error sensitivity of a given component, circuit or system from the monitoring of a population of devices subjected to natural radiation and operating under nominal conditions. This review gives a survey over recent real-time SER experiments, conducted in altitude and/or underground, and investigating modern CMOS logic technologies, down to the 40 nm technological node. The review also includes our different contributions conducted during the last decade on the ASTEP Platform (Altitude Single Event Effects Test European Platform) and at the LSM facility (Underground Laboratory of Modane) to characterize soft error mechanisms in advanced static (SRAM) memories. Finally, the review discusses the specific advantages and limitations of this approach as well as its comparison with accelerated tests using intense particle beams or sources. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：1455 / 1476

页数：22

共 69 条

[1]

Aguayo E., 2011, PNNL20693

[2] Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source [J].

Andreani, C. ;

Pietropaolo, A. ;

Salsano, A. ;

Gorini, G. ;

Tardocchi, M. ;

Paccagnella, A. ;

Gerardin, S. ;

Frost, C. D. ;

Ansell, S. ;

Platt, S. P. .

APPLIED PHYSICS LETTERS, 2008, 92 (11)

[3]

[Anonymous], 2013, XILINX DEVICE RELIAB

[4]

[Anonymous], 2006, JESD89 JEDEC SOL STA

[5]

[Anonymous], 2006, 623961 TS IEC

[6]

[Anonymous], 2004, SER-History, Trends and Challenges:A Guide for Designing With Memory ICs

[7] Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs [J].

Autran, J. L. ;

Serre, S. ;

Semikh, S. ;

Munteanu, D. ;

Gasiot, G. ;

Roche, P. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) :2658-2665

[8] Real-Time Soft-Error Testing of 40nm SRAMs [J].

Autran, J. L. ;

Serre, S. ;

Munteanu, D. ;

Martinie, S. ;

Semikh, S. ;

Sauze, S. ;

Uznanski, S. ;

Gasiot, G. ;

Roche, P. .

2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012,

[9] Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level [J].

Autran, J. L. ;

Munteanu, D. ;

Roche, P. ;

Gasiot, G. ;

Martinie, S. ;

Uznanski, S. ;

Sauze, S. ;

Semikh, S. ;

Yakushev, E. ;

Rozov, S. ;

Loaiza, P. ;

Warot, G. ;

Zampaolo, M. .

MICROELECTRONICS RELIABILITY, 2010, 50 (9-11) :1822-1831

[10] Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM [J].

Autran, J. L. ;

Roche, P. ;

Sauze, S. ;

Gasiot, G. ;

Munteanu, D. ;

Loaiza, P. ;

Zampaolo, M. ;

Borel, J. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (04) :2258-2266

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