Implementation of A Differential mm-Wave CMOS SOI Power Amplifier

被引：0

作者：

Shan, Hengying

Conrad, N.

Hathorn, S.

Peterson, J.

Mohammadi, S.

机构：

来源：

2019 IEEE MTT-S INTERNATIONAL MICROWAVE CONFERENCE ON HARDWARE AND SYSTEMS FOR 5G AND BEYOND (IMC-5G) | 2019年

关键词：

5G; CMOS; high efficiency; mm-wave; power amplifier; SOI; HIGH-EFFICIENCY; CELL;

D O I：

10.1109/imc-5g47857.2019.9160371

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A mm-wave class AB power amplifier (PA) is implemented in Globalfoundries 45 nm CMOS SOI technology. The PA is designed in the frequency range of 40 to 50 GHz based on a differential stack of triple transistor cells. It uses a total of 12 NMOS transistors and has only been measured in the frequency range of 44 to 50 GHz. It achieves a single-ended saturated output power P-sat of 22.2 dBm (similar to 25 dBm differential) and a peak power-added efficiency PAE of 30% at 44 GHz. The overall power performance in the range of 44 GHz to 50 GHz remains acceptable.

引用

页数：3