Implementation of A Differential mm-Wave CMOS SOI Power Amplifier

被引：0
作者：
Shan, Hengying
Conrad, N.
Hathorn, S.
Peterson, J.
Mohammadi, S.
机构：
来源：
2019 IEEE MTT-S INTERNATIONAL MICROWAVE CONFERENCE ON HARDWARE AND SYSTEMS FOR 5G AND BEYOND (IMC-5G) | 2019年
关键词：
5G; CMOS; high efficiency; mm-wave; power amplifier; SOI; HIGH-EFFICIENCY; CELL;
D O I：
10.1109/imc-5g47857.2019.9160371
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A mm-wave class AB power amplifier (PA) is implemented in Globalfoundries 45 nm CMOS SOI technology. The PA is designed in the frequency range of 40 to 50 GHz based on a differential stack of triple transistor cells. It uses a total of 12 NMOS transistors and has only been measured in the frequency range of 44 to 50 GHz. It achieves a single-ended saturated output power P-sat of 22.2 dBm (similar to 25 dBm differential) and a peak power-added efficiency PAE of 30% at 44 GHz. The overall power performance in the range of 44 GHz to 50 GHz remains acceptable.
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页数：3
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