Thermoelectric properties of (ZnSe)x(CdS)1-x films deposited by thermal evaporation

被引：2
作者：
Reddy, BK [1 ]
Reddy, MM [1 ]
Venugopal, R [1 ]
Reddy, DR [1 ]
机构：
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1998年 / 145卷 / 1-2期
关键词：
thermoelectric power; electron density; thin films; semiconductors; (ZnSe)(x)(CdS)(1-x); ZnSe; CdS; electrical conductivity; mobility; grain boundary scattering;
D O I：
10.1080/10420159808220029
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Polycrystalline (ZnSe)(x)(CdS)(1-x) (0 less than or equal to x less than or equal to 1.0) films were formed on glass substrates kept at a temperature of 197 degreesC by thermal evaporation technique. The dark conductivity and thermoelectric power were measured and were used to calculate the electron density and mobility. The temperature dependences of electrical conductivity (sigma), thermoelectric power (S), electron density (n) and mobility (mu) have been studied. The mobility increases with increase of temperature, indicating the dominance of grain boundary scattering mechanism in these films. The conductivity activation energy and grain boundary potentials are also reported. The conductivity, electron density and mobility decrease with increase of composition parameter 'x'. Thermoelectric properties of ZnSe-CdS films have been reported for the first time.
引用
收藏
页码：133 / 142
页数：10
相关论文
共 50 条
  • [31] Structural and optical properties of nanocrystalline tin sulphide thin films deposited by thermal evaporation
    Salem, A.
    Ahmed, S. S.
    Alamri, S. N.
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2015, 53 (10) : 696 - 700
  • [32] Structural behaviour of ZnSxSe1-x films deposited by close-spaced evaporation
    Subbaiah, YPV
    Reddy, KTR
    MATERIALS CHEMISTRY AND PHYSICS, 2005, 92 (2-3) : 448 - 452
  • [33] Characterization of spray deposited ternary ZnSxSe(1-x) thin films for solar cell buffers
    Krishna, Ganesha V. S.
    Mahesha, M. G.
    SURFACES AND INTERFACES, 2020, 20
  • [34] Optimization of thermoelectric properties on Bi2Te3 thin films deposited by thermal co-evaporation
    Goncalves, L. M.
    Couto, C.
    Alpuim, P.
    Rolo, A. G.
    Voelklein, F.
    Correia, J. H.
    THIN SOLID FILMS, 2010, 518 (10) : 2816 - 2821
  • [35] Growth of (GaAs)1 − x(ZnSe)x solid solution films and investigation of their structural and some photoelectric properties
    A. S. Saidov
    M. S. Saidov
    Sh. N. Usmonov
    A. Yu. Leiderman
    M. U. Kalanov
    K. G. Gaimnazarov
    A. N. Kurmantaev
    Physics of the Solid State, 2011, 53
  • [36] Deposition of (CdO)1-x(PbO)x thin films by spray pyrolysis technique and their characterization
    Kumaravel, R.
    Krishnakumar, V.
    Ramamurthi, K.
    Elangovan, E.
    Thirumavalavan, M.
    THIN SOLID FILMS, 2007, 515 (7-8) : 4061 - 4065
  • [37] Structure and high temperature oxidation of Zr(1-x)Mo(x) N thin films deposited by reactive magnetron sputtering
    Soares, V. F. D.
    Fernandez, D. A. R.
    Fontes Junior, A. S.
    Carvalho, R. G.
    Machado, R.
    Mendes, F. M. T.
    Tentardini, E. K.
    APPLIED SURFACE SCIENCE, 2019, 485 : 490 - 495
  • [38] Atomic-scale structure of In 1-x Ga x Sb thin films as-deposited and after ion irradiation
    Bolzan, Charles A.
    Johannessen, Bernt
    Wu, Zhibin
    Giulian, Raquel
    RADIATION PHYSICS AND CHEMISTRY, 2024, 221
  • [39] Optical band gap engineering of (MgO)x(ZnO)1-x films deposited by sol-gel spin coating
    Temel, S.
    Nebi, M.
    Peker, D.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 12 (1-2): : 76 - 79
  • [40] Stoichiometry-dependent porosity by ion irradiation: In(1-x)Al(x)Sb films
    Bolzan, Charles A.
    Manzo, Danay J.
    Notthoff, Christian
    Kluth, Patrick
    Giulian, Raquel
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2021, 148
12345