Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm

被引：1

作者：

Shimizu, Ken ^{[1
]}

Hiramoto, Toshiro ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

D O I：

10.1143/JJAP.49.041302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mobility degradation in (110)-oriented ultrathin-body double-gate p-type metal-oxide-semiconductor field-effect transistors is experimentally demonstrated for the first time. The physical origin of the mobility degradation can be attributed to the increase in the larger population in the higher-energy subband, leading to a stronger inter-subband scattering. (C) 2010 The Japan Society of Applied Physics

引用

页码：0413021 / 0413023

页数：3

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