Comparison of the telephone cord delamination method for measuring interfacial adhesion with the four-point bending method

Adhesion of Pt films to Si substrates with a native SiO(2) oxide has been investigated using telephone cord induced delamination as well as the four-point bending method. Telephone cord delamination was induced by SpUlterin2 a thick compressively stressed overlayer onto the Pt/SiO(2), films. The Pt/SiO(2), interface fracture energy was obtained by measuring the dimensions of the delaminations and using available fracture mechanics models. Interface fracture energy was also measured using the established four-point bend method with pre-fabricated specimens containing the films sandwiched between two silicon substrates- The results of both methods are compared. Phenomenological and FEM models were used to account for the different loading mode mixities of the two-experiments. Analysis of the telephone cord induced delamination was shown to provide similar interface fracture energy value, compared to the four-point bend method. (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.