Crystal structure and electronic transport of Dy@C82 -: art. no. 115410

被引:36
作者
Kubozono, Y [1 ]
Takabayashi, Y
Shibata, K
Kanbara, T
Fujiki, S
Kashino, S
Fujiwara, A
Emura, S
机构
[1] Inst Mol Sci, Dept Vacuum UV Photosci, Okazaki, Aichi 4448585, Japan
[2] Okayama Univ, Dept Chem, Okayama 7008530, Japan
[3] Japan Adv Inst Sci & Technol, Tatsunokuchi, Ishikawa 9231292, Japan
[4] Osaka Univ, ISIR, Osaka 5670047, Japan
关键词
D O I
10.1103/PhysRevB.67.115410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The crystal structure of Dy@C-82 isomer I at 298 K has been determined by Rietveld refinement for x-ray powder diffraction with synchrotron radiation. Isomer I shows a simple cubic structure (sc: Pa (3) over bar) with a lattice constant a of 15.78(1) Angstrom. The C-2 axis of a C-2v-C-82 cage aligns along the [111] direction of this crystal lattice. The C-82 cage is orientationally disordered to satisfy a (3) over bar symmetry along [111], which is requested in this space group. The large thermal parameter for the Dy atom estimated from the x-ray diffraction probably reflects a large disorder caused by a floating motion of the Dy atom inside the C-82 cage as well as a ratchet-type motion of the Dy@C-82 molecule. The electronic transport of thin film of Dy@C-82 shows a semiconducting behavior. The energy gap E-g is estimated to be 0.2 eV. Further, the variation of valence from Dy3+ to Dy2+ is found by metal doping into the Dy@C-82 crystals.
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页数:8
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