InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3 μm

被引：13

作者：

Jang, YD

Yim, JS

Lee, UH

Lee, D ^{[1
]}

Jang, JW

Park, KH

Jeong, WG

Lee, JH

Oh, DK

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon, South Korea

[3] Elect & Telecommun Res Inst, Taejon 305350, South Korea

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期

关键词：

quantum dot; laser diode; nitrogen;

D O I：

10.1016/S1386-9477(02)00744-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A strong and narrow photoluminescence (PL) signal with a full-width at half-maximum of 34 meV emitting at 1.3 mum at room temperature has been obtained from InAsN quantum dots (QD) on GaAs. The PL yield of the 1.3 mum peak at room temperature remains at 8% of the value at 10 K and the carrier lifetime at 10 K is measured to be 600 ps. We believe these values indicate that the gown InAsN QDs are of high crystal quality (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：127 / 128

页数：2

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