InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3 μm

被引：13
|
作者：
Jang, YD
Yim, JS
Lee, UH
Lee, D [1 ]
Jang, JW
Park, KH
Jeong, WG
Lee, JH
Oh, DK
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon, South Korea
[3] Elect & Telecommun Res Inst, Taejon 305350, South Korea
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
quantum dot; laser diode; nitrogen;
D O I：
10.1016/S1386-9477(02)00744-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A strong and narrow photoluminescence (PL) signal with a full-width at half-maximum of 34 meV emitting at 1.3 mum at room temperature has been obtained from InAsN quantum dots (QD) on GaAs. The PL yield of the 1.3 mum peak at room temperature remains at 8% of the value at 10 K and the carrier lifetime at 10 K is measured to be 600 ps. We believe these values indicate that the gown InAsN QDs are of high crystal quality (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：127 / 128
页数：2
相关论文
共 50 条
  • [1] Narrow photoluminescence from 1.3 μm InAs/GaAs quantum dots
    Jang, YD
    Yim, JS
    Kim, NJ
    Lee, D
    Jang, JW
    Park, KH
    Jeong, WG
    Oh, DK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S393 - S394
  • [2] Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots
    WEI Quan xiang 1
    2. Nat.Lab.for Superlattices and Microstructures
    Semiconductor Photonics and Technology, 2003, (01) : 30 - 33
  • [3] Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
    Egorov, VA
    Polyakov, NK
    Tonkikh, AA
    Petrov, VN
    Cirlin, GE
    Volovik, BV
    Zhukov, AE
    Musikhin, YG
    Cherkashin, NA
    Ustinov, VM
    APPLIED SURFACE SCIENCE, 2001, 175 : 243 - 248
  • [4] Enhanced Photoluminescence of 1.3?m InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission
    Kim, Yeonhwa
    Chu, Rafael Jumar
    Ryu, Geunhwan
    Woo, Seungwan
    Lung, Quang Nhat Dang
    Ahn, Dae-Hwan
    Han, Jae-Hoon
    Choi, Won Jun
    Jung, Daehwan
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (39) : 45051 - 45058
  • [5] Quantum dots for VCSEL applications at λ=1.3 μm
    Ledentsov, N
    Bimberg, D
    Ustinov, VM
    Alferov, ZI
    Lott, JA
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) : 871 - 875
  • [6] 1.52 μm photoluminescence from InAs quantum dots grown on patterned GaAs buffer
    Wong, P. S.
    Liang, B. L.
    Nuntawong, N.
    Xue, L.
    Tatebayashi, J.
    Brueck, S. R. J.
    Huffaker, D. L.
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 408 - +
  • [7] Optically-detected microwave resonance in InGaAsN/GaAs quantum wells and InAs/GaAs quantum dots emitting around 1.3 μm
    Baranov, P. G.
    Romanov, N. G.
    Preobrazhenski, V. L.
    Egorov, A. Yu.
    Ustinov, V. M.
    Sobolev, M. M.
    INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 2, NO 6, 2003, 2 (06): : 469 - 478
  • [8] NEAR-1.3-MU-M HIGH-INTENSITY PHOTOLUMINESCENCE AT ROOM-TEMPERATURE BY INAS/GAAS MULTI-COUPLED QUANTUM DOTS
    TACKEUCHI, A
    NAKATA, Y
    MUTO, S
    SUGIYAMA, Y
    INATA, T
    YOKOYAMA, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (4A): : L405 - L407
  • [9] Photoluminescence study of shallow acceptors in GaAs spherical quantum dots
    SilvaValencia, J
    ParedesGutierrez, H
    PorrasMontenegro, N
    JOURNAL OF LUMINESCENCE, 1997, 72-4 : 403 - 405
  • [10] Hydrostatic pressure coefficients of the photoluminescence of InAs/GaAs quantum dots
    Tang, NY
    Chen, XS
    Lu, W
    ACTA PHYSICA SINICA, 2005, 54 (05) : 2277 - 2281
12345