We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy. (C) 2014 AIP Publishing LLC.
机构:
Bandung Inst Technol, Phys Elect Mat Res Div, Fac Math & Nat Sci, Bandung, IndonesiaBandung Inst Technol, Phys Elect Mat Res Div, Fac Math & Nat Sci, Bandung, Indonesia
Sustini, E.
Khairurrijal
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Bandung Inst Technol, Phys Elect Mat Res Div, Fac Math & Nat Sci, Bandung, IndonesiaBandung Inst Technol, Phys Elect Mat Res Div, Fac Math & Nat Sci, Bandung, Indonesia
Khairurrijal
Noor, F. A.
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Bandung Inst Technol, Phys Elect Mat Res Div, Fac Math & Nat Sci, Bandung, IndonesiaBandung Inst Technol, Phys Elect Mat Res Div, Fac Math & Nat Sci, Bandung, Indonesia
Noor, F. A.
Syariati, R.
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Bandung Inst Technol, Phys Elect Mat Res Div, Fac Math & Nat Sci, Bandung, IndonesiaBandung Inst Technol, Phys Elect Mat Res Div, Fac Math & Nat Sci, Bandung, Indonesia
Syariati, R.
5TH INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS SCIENCES AND TECHNOLOGY (ICAMST 2017),
2018,
367
机构:
Nankai Univ, Sch Phys, TEDA Inst Appl Phys, Tianjin 300457, Peoples R China
Nankai Univ, TEDA Appl Phys Inst, Tianjin 300457, Peoples R China
Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R ChinaNankai Univ, Sch Phys, TEDA Inst Appl Phys, Tianjin 300457, Peoples R China
Luo, Weiwei
Fan, Jiang
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Nankai Univ, Sch Phys, TEDA Inst Appl Phys, Tianjin 300457, Peoples R ChinaNankai Univ, Sch Phys, TEDA Inst Appl Phys, Tianjin 300457, Peoples R China
Fan, Jiang
Kuzmenko, Alexey B.
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h-index: 0
机构:
Univ Geneva, Dept Quantum Matter Phys, CH-1211 Geneva, SwitzerlandNankai Univ, Sch Phys, TEDA Inst Appl Phys, Tianjin 300457, Peoples R China
Kuzmenko, Alexey B.
Cai, Wei
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机构:
Nankai Univ, Sch Phys, TEDA Inst Appl Phys, Tianjin 300457, Peoples R ChinaNankai Univ, Sch Phys, TEDA Inst Appl Phys, Tianjin 300457, Peoples R China
Cai, Wei
Xu, Jingjun
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机构:
Nankai Univ, Sch Phys, TEDA Inst Appl Phys, Tianjin 300457, Peoples R ChinaNankai Univ, Sch Phys, TEDA Inst Appl Phys, Tianjin 300457, Peoples R China
机构:
Univ Estado Rio De Janeiro, Polytech Inst, BR-28625570 Nova Friburgo, RJ, BrazilUniv Estado Rio De Janeiro, Polytech Inst, BR-28625570 Nova Friburgo, RJ, Brazil
Barboza, Alexandre M.
Aliaga, Luis C. R.
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机构:
Univ Estado Rio De Janeiro, Polytech Inst, BR-28625570 Nova Friburgo, RJ, BrazilUniv Estado Rio De Janeiro, Polytech Inst, BR-28625570 Nova Friburgo, RJ, Brazil
Aliaga, Luis C. R.
Faria, Daiara
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Univ Estado Rio De Janeiro, Polytech Inst, BR-28625570 Nova Friburgo, RJ, BrazilUniv Estado Rio De Janeiro, Polytech Inst, BR-28625570 Nova Friburgo, RJ, Brazil
Faria, Daiara
Bastos, Ivan N.
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Univ Estado Rio De Janeiro, Polytech Inst, BR-28625570 Nova Friburgo, RJ, BrazilUniv Estado Rio De Janeiro, Polytech Inst, BR-28625570 Nova Friburgo, RJ, Brazil