Characterization of Smooth CdTe(111) Films by the Conventional Close-Spaced Sublimation Technique

被引：16

作者：

Escobedo, A. ^{[1
]}

Quinones, S. ^{[1
]}

Adame, M. ^{[1
]}

McClure, J. ^{[2
]}

Zubia, D. ^{[1
]}

Brill, G. ^{[3
]}

机构：

[1] Univ Texas El Paso, Dept Elect & Comp Engn, El Paso, TX 79968 USA

[2] Univ Texas El Paso, Dept Met & Mat Engn, El Paso, TX 79968 USA

[3] USA, Res Lab, Adelphi, MD USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 04期

基金：

美国国家科学基金会;

关键词：

CdTe; II-VI semiconductors; close-spaced sublimation (CSS); scanning electron microscopy (SEM); x-ray diffraction (XRD); MOLECULAR-BEAM EPITAXY; CHEMICAL-VAPOR-DEPOSITION; CDTE LAYERS; SUBSTRATE ORIENTATION; PHASE EPITAXY; (111)B CDTE; SOLAR-CELLS; GROWTH; HGCDTE; GAAS;

D O I：

10.1007/s11664-010-1082-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin epitaxial CdTe films were grown on CdTe(111)B substrates by the close-spaced sublimation (CSS) technique and were characterized over a range of experimental parameters. The source temperature was varied between 480A degrees C and 540A degrees C, maintaining an average constant source-substrate temperature difference Delta T of similar to 130A degrees C. Helium was used as a carrier gas at pressures between 2 Torr and 10 Torr. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to analyze the film morphology and structure. Growth rates ranging from 1 mu m/h to 4 mu m/h were observed, based on profilometer thickness measurements. The addition of a pre-growth heat treatment step and post-growth annealing treatment resulted in smooth CdTe(111) films. An evolution in growth morphology was demonstrated with SEM images and film quality was confirmed with XRD.

引用

页码：400 / 409

页数：10

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