Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector

被引：65

作者：

Lobo, N. ^{[1
]}

Rodriguez, H. ^{[2
]}

Knauer, A. ^{[2
]}

Hoppe, M. ^{[2
]}

Einfeldt, S. ^{[2
]}

Vogt, P. ^{[1
]}

Weyers, M. ^{[2
]}

Kneissl, M. ^{[1
,2
]}

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

[2] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

关键词：

aluminium; gallium compounds; III-V semiconductors; image resolution; light emitting diodes; ohmic contacts; palladium; EFFICIENCY;

D O I：

10.1063/1.3334721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a nanopixel contact design for nitride-based ultraviolet light-emitting diodes to enhance light extraction. The structure consists of arrays of Pd ohmic contact pixels and an overlying Al reflector layer. Based on this design a twofold increase in the light output, compared to large area Pd square contacts is demonstrated. Theoretical calculations and experiments reveal that a nanopixel spacing of 1 mu m or less is required to enable current overlap in the region between the nanopixels due to current spreading in the p-GaN layer and to ensure current injection into the entire active region. Light emitted in the region between the nanopixels will be reflected by the Al layer enhancing the light output. The dependence of the light extraction on the nanopixel size and spacing is investigated.

引用

页数：3

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