Composition and structure of NiTiCu shape memory thin films

被引：8

作者：

Frantz-Rodriguez, N

Bosseboeuf, A

Dufour-Gergam, E

Stambouli-Séné, V

Nouet, G

Seiler, W

Lebrun, JL

机构：

[1] Univ Paris Sud, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] LERMAT, UPRESA 6004, F-14050 Caen, France

[3] ENSAM Paris, LM3, UPRESA 8006, F-75013 Paris, France

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2000年 / 10卷 / 02期

关键词：

Annealing - Composition - Crystallization - Nickel alloys - Pressure - Semiconducting silicon - Shape memory effect - Sputter deposition - Structure (composition) - Temperature;

D O I：

10.1088/0960-1317/10/2/308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Preliminary results on NiTiCu shape memory alloy thin-film deposition on silicon are reported. Characteristics of these films (composition, density and electrical resistivity) were correlated with working gas pressure and rf power during sputtering. The films were then annealed in order to crystallize them. The properties of these films were examined as functions of annealing and measurement temperatures in order to evidence shape memory behaviour.

引用

页码：147 / 151

页数：5

共 10 条

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BUCHAILLOT L, 1997, P 2 INT C SHAP MEM S, P183

[2]

Bush J.D., 1990, J APPL PHYS, V68, P6224

[3]

ISHIDA A, 1995, J PHYSIQUE, V4, P683

[4] Vacuum-deposited TiNi shape memory film. Characterization and applications in microdevices [J].