Influence of deep level impurities on modulation response of InGaP light emitting diodes

被引：23

作者：

Guina, M ^{[1
]}

Dekker, J

Tukiainen, A

Orsila, S

Saarinen, M

Dumitrescu, M

Sipilä, P

Savolainen, P

Pessa, M

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33720 Tampere, Finland

[2] Helsinki Univ Technol, Phys Lab, FIN-02015 Hut, Finland

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 02期

关键词：

D O I：

10.1063/1.1332091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of deep level impurities on static and dynamic properties of InGaP-based light emitters grown by all-solid-source molecular-beam epitaxy is analyzed. The improvement of the output power and the decrease in modulation bandwidth induced by the burn-in process are explained by the recombination enhanced annealing of one deep level trap. This assumption is experimentally proven through comparison of small-signal analysis for resonant cavity light-emitting diodes operating at 650 nm and deep level transient spectroscopy results. Finally, the concentration of the midgap recombination center N3 in the active region is shown to play an important role in the performance of the InGaP devices. (C) 2001 American Institute of Physics.

引用

页码：1151 / 1155

页数：5

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