Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field

被引：11

作者：

Yu, C. H. ^{[1
,2
]}

Zhang, B. ^{[1
]}

Lu, W. ^{[1
]}

Shen, S. C. ^{[1
]}

Liu, H. C. ^{[3
,4
]}

Fang, Y. -Y. ^{[2
]}

Dai, J. N. ^{[2
]}

Chen, C. Q. ^{[2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Coll Optoelect Sci & Engn, Wuhan 430074, Peoples R China

[3] CNR, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[4] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200030, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

基金：

美国国家科学基金会; 中国博士后科学基金;

关键词：

Photodetectors - Semiconducting gallium - Gallium arsenide - Magnetic fields - Photons - III-V semiconductors - Quantum well infrared photodetectors;

D O I：

10.1063/1.3462300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A strong enhancement of terahertz (THz) response in a GaAs/AlGaAs quantum well photodetector (QWP) is observed under perpendicular magnetic field. Photocurrent spectra show that besides partial contribution from an increase in the detector differential resistance, improvement of photoconductive gain induced by electron localization and Landau quantization of the in-plane electron motion in quantum wells is the predominant underlying mechanism. This study sheds light on the transport mechanism in THz QWPs and provides a possible means for enhancing THz QWP's response. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3462300]

引用

页数：3

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