Variable-area capacitors controlled by HfO2-based ferroelectric-gate field-effect transistors

被引：7

作者：

Miyasako, Takaaki ^{[1
]}

Yoneda, Shingo ^{[1
]}

Hosokura, Tadasu ^{[1
]}

Kimura, Masahiko ^{[1
]}

Tokumitsu, Eisuke ^{[2
]}

机构：

[1] Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, Japan

[2] Japan Adv Inst Sci & Technol JAIST, Sch Mat Sci, Nomi, Ishikawa 9231211, Japan

来源：

APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 26期

关键词：

THIN-FILM TRANSISTORS; INSULATOR; RETENTION; CHANNEL; FET;

D O I：

10.1063/5.0089049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a three-terminal variable-area capacitor integrated with a ferroelectric-gate field-effect transistor (FeFET) and a paraelectric thin-film capacitor. Owing to the large charge controllability and nonvolatile memory function of the ferroelectric Hf0.86Ce0.14O2 (14% Ce-HfO2) gate insulator, the variable-area capacitors exhibited high capacitance tuning ratios of up to 184 with steep modulation to gate voltage swing (440 mV/decade), a capacitance-switching speed of less than 10 ms, and capacitance-memory-retention characteristics of up to 10(5) s. An FeFET with an indium tin oxide (ITO) channel and a ferroelectric 14% Ce-HfO2 gate insulator was fabricated as a switching FET via chemical solution deposition, followed by stacking a sputtered Al2O3 film as a variable capacitor. The fabricated FeFETs exhibited a high on-current of & SIM;0.15 A/mm, a large on/off current ratio of 10(7), a field-effect mobility of 15.6 cm(2)/V s, and a memory window of & SIM;5 V. The high on-current, i.e., low on-resistance (84 omega), and the large on/off current ratio allow the ITO channel to act as a wiring that connects and disconnects two capacitors with different electrode areas; therefore, the proposed variable capacitor can achieve wide and steep modulation by ferroelectric gating. This study provides prospects for the future integration of passive and active components for advanced high-efficiency and miniaturized electronics such as power devices and communication equipment. Published under an exclusive license by AIP Publishing.

引用

页数：6

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