A digital envelope modulator for an OFDM WLAN polar transmitter in 90 nm CMOS

被引：0
|
作者：
van Zeijl, P. T. M. [1 ]
Collados, M. [1 ]
机构：
[1] Philips Res, NXP Res, High Tech Campus 5, NL-5656 AE Eindhoven, Netherlands
来源：
2007 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS | 2007年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90nm digital CMOS process for the 802.11a/b/g standards. The digital modulator reaches an output power of -5dBm for 54Mbit/s using 64QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7mW from a 1.2V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.
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页码：192 / +
页数：2
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