Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma

被引：11

作者：

Li, Yan-Lin ^{[1
]}

Chang-Liao, Kuei-Shu ^{[1
]}

Ku, Chao-Chen ^{[1
]}

Ruan, Dun-Bao ^{[1
]}

Huang, Chin-Hsiu ^{[1
]}

Hsu, Yi-Wen ^{[1
]}

Tsai, Shang-Fu ^{[1
]}

Yang, Meng-Ying ^{[1
]}

Wu, Wen-Fa ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

[2] Natl Nano Device Labs NDL, Hsinchu, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2017年 / 178卷

关键词：

FinFETs; Ge buried channel; Plasma treatment; Interfacial layer; HFO2;

D O I：

10.1016/j.mee.2017.04.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical characteristics of Ge buried channel FinFETs with interfacial layer (IL) treated by CF4, NH3, and H-2 plasma were studied in this work. Although Ge buried channel and plasma treatments on ILs have been reported, their applications on FinFETs are not seen. Experimental results show that higher on-current and on/off current ratio of FinFETs are achieved by CF4 plasma treatment owing to higher fraction of the tetragonal HfO2. FinFETs with NH3 and H-2 plasma treatments show smaller subthreshold swing values and better reliability characteristics. The improvement may be attributed to the ILs with good quality. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：5 / 9

页数：5

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