Electronic and magnetic properties of silicene monolayer under bi-axial mechanical strain: First principles study

被引:6
作者
Jafari, M. A. [1 ]
Kordbacheh, A. A. [2 ]
Dyrdal, A. [1 ]
机构
[1] Adam Mickiewicz Univ, Fac Phys, ISQI, Dept Mesoscop Phys, Ul Uniwersytetu Poznanskiego 2, PL-61614 Poznan, Poland
[2] Iran Univ Sci & Technol, Dept Phys, Tehran 1684613114, Iran
关键词
Density functional theory; Silicene; Strain; Electronic properties; Magnetic properties; HONEYCOMB STRUCTURES; CARRIER MOBILITY; SPIN HALL; GRAPHENE; 1ST-PRINCIPLES; TRANSITION; TRANSPORT; BANDGAP;
D O I
10.1016/j.jmmm.2022.169260
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mechanical control of electronic and magnetic properties of 2D Van-der-Waals heterostructures gives new possibilities for further development of spintronics and information-related technologies. Using the density functional theory, we investigate the structural, electronic and magnetic properties of silicene monolayer with substituted Chromium atoms and under a small biaxial strain (-6% < epsilon < 8%). Our results indicate that the Cr-doped silicene nanosheets without strain have magnetic metallic, half-metallic or semiconducting properties depending on the type of substitution. We also show that the magnetic moments associated with the monomer and vertical dimer substitutions change very weakly with strain. However, the magnetic moment associated with the horizontal dimer substitution decreases when either compressive or tensile strain is applied to the system. Additionally, we show that the largest semiconductor band-gap is approximately 0.13 eV under zero strain for the vertical Cr-doped silicene. Finally, biaxial compressive strain leads to irregular changes in the magnetic moment for Cr vertical dimer substitution.
引用
收藏
页数:7
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