Nanophotonic devices on thin buried oxide Silicon-On-Insulator substrates

被引：20
|
作者：
Sridaran, Suresh [1 ]
Bhave, Sunil A. [1 ]
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, OxideMEMS Lab, Ithaca, NY 14850 USA
来源：
OPTICS EXPRESS | 2010年 / 18卷 / 04期
关键词：
RING RESONATORS; PHOTONIC WIRES; WAVE-GUIDES; FABRICATION; CHALLENGES;
D O I：
10.1364/OE.18.003850
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this technology. Propagation losses for the waveguides using the cutback method are 3.88 dB/cm for the quasi-TE mode and 5.06 dB/cm for the quasi-TM mode. Ring resonators with a loaded quality factor (Q) of 46,500 for the quasi-TM mode and intrinsic Q of 148,000 for the quasi-TE mode have been obtained. This process will enable the integration of photonic structures with thin buried oxide SOI based electronics. (C)2010 Optical Society of America
引用
收藏
页码：3850 / 3857
页数：8
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