Electroluminescent Ga2O3:Mn thin films prepared by sol gel process

Thin-film electroluminescent (TFEL) devices composed of an oxide phosphor thin film prepared by dip-coating and a thick BaTiO3 ceramic sheet insulator have been newly developed. A new method of inexpensively depositing Ga2O3:Mn thin films using a sol-gel process which eliminates the need for vacuum processes was used with the dip-coating technique. A high luminance green emission was obtained in single-insulating-layer-type TFEL devices with a Ga2O3:Mn thin-film emitting layer prepared by the sol-gel process at a depositing temperature of 700 degrees C and postannealing temperature of 1020 degrees C. Luminances of 504 and 156 cd/m(2) were obtained in a Ga2O3:Mn TFEL device driven at 1 kHz and 60 Hz, respectively.