Characterization of (As.Te)1-xSex thin films

被引：23

作者：

Hafiz, MM ^{[1
]}

Moharram, AH ^{[1
]}

Abu-Sehly, AA ^{[1
]}

机构：

[1] Assiut Univ, Dept Phys, Assiut, Egypt

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / 02期

关键词：

D O I：

10.1007/s003390050658

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical absorption at room temperature and electrical resistivity at temperatures between 200 and 320 K for (As.Te)(1-x)Se-x thin films (where x = 0.20, 0.23, 0.27, 0.32 and 0.44) have been studied. Increasing the Se content was found to increase the optical energy gap and the activation energy for conduction of the investigated films. The optical energy gap of the As0.40Te0.40Se0.20 films was increased up to 1.21 eV by increasing the film thickness to similar to 120 nm, while thermal annealing at 480 K reduced it down to 0.83 eV. The decrease of the optical gap is discussed on the basis of amorphous-crystalline transformations.

引用

页码：217 / 221

页数：5

共 24 条

[1]

Bagley B.G., 1974, Amorphous and liquid semiconductors

[2] AMORPHOUS TO CRYSTALLINE TRANSITION OF SELENIUM THIN-FILMS OF DIFFERENT THICKNESSES [J].